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Original Article

Influence of structure design parameters of chamber and buffer on thickness uniformity of iron oxide CVD thin film

Yong-Hyon Kim1 Yong-Ju Han2 Hak Bong Kim3
1 2 3 Student member, IEEE, Semiconductor Institute, Kim Chaek University of Technology, Yonggwang Street, Pyongyang, Democratic People’s Republic of Korea.

Published Online: September-October 2025

Pages: 122-129

References

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3. Yan Kun Tang et al , A hard mask process and alignment device aims to achieve high consistency and mass-scale production of gas sensors based on spraying hydrothermal gas sensing material, RESEARCH ARTICLE, OCTOBER, 16, 2023
4. Lucas Jaloustre et al , Faceting mechanisms of GaN nanopillar under KOH wet etching, Materials Science in Semiconductor Processing,Volume 173, 2024, 108095
5. Julia Bondareva et al , Wet scandium etching for hard mask formation on a silicon substrate,Thin Solid Films Volume 762, 2022, 139543
6. C. Manfredotti, A. Lo Giudice, C. Ricciardi, C. Paolini,E. Massa, F. Fizzotti, E. Vittone, CVD diamond microdosimeters, Nuclear Instruments and Methods in Physics Research, A 458, 2001, 360-364.
7. Miki Onoue , Hirobumi Ushijima, Fabrication for metal photomask pattern by using fountain-pen nanolithography, Microelectronic Engineering ,87, 2010, 910–913.
8. Pijush K. Kundu, Ira M. Cohen, Fluid Mechanics, ELSEVIER, 72, , 2006, .36
9. Kristina Bespalova et al , Metal organic Chemical Vapor Deposition of AlN on High Degree Roughness Vertical Surfaces for MEMS Fabrication, Advanced Electronic Materials , 5, 2024, 2300628
10. Souhir Echi, Abdallah Bouabidi, Zied Driss, Mohamed Salah Abid, CFD simulation and optimization of industrial boiler, Energy, vol.169, 2019, 51-54.flows, Computers and Chemical Engineering, 29, 2005, 2386–2403.

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